Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
نویسندگان
چکیده
Abstract Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement electrons or introduction novel electronic magnetic states at interface. In this work we demonstrate heteroepitaxial growth nanoribbons (GNRs) passivated hBN using high-temperature molecular beam epitaxy (HT-MBE) grow oriented trenches formed ex-situ catalytic nanoparticle etching. High resolution atomic force microscopy (AFM) reveals that epitaxially from etched edges, merge form nanoribbon network hBN. Using conductive AFM probe nanoscale electrical observe quasiparticle interference patterns caused intervalley scattering graphene/hBN interface, which carries implications for potential transport characteristics GNR devices.
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ژورنال
عنوان ژورنال: 2D materials
سال: 2023
ISSN: ['2053-1583']
DOI: https://doi.org/10.1088/2053-1583/acdefc